- Manufacturer :
- Nexperia
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector (Ic) (Max) :
- 1 A
- Current - Collector Cutoff (Max) :
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA, 5V
- Frequency - Transition :
- 100MHz
- Mounting Type :
- Surface Mount
- Operating Temperature :
- 150°C (TJ)
- Package / Case :
- TO-243AA
- Power - Max :
- 1.35 W
- Product Status :
- Active
- Supplier Device Package :
- SOT-89
- Transistor Type :
- PNP
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 50mA, 500mA
- Voltage - Collector Emitter Breakdown (Max) :
- 60 V
- Datasheets
- BSR31,135
Manufacturer related products
Catalog related products
Related products
| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| BSR30,115 | Nexperia | 35,000 | TRANS PNP 60V 1A SOT89 |
| BSR30,115 | Nexperia | 35,000 | TRANS PNP 60V 1A SOT89 |
| BSR302KL6327 | Infineon Technologies | 35,000 | SMALL SIGNAL MOSFET |
| BSR302N L6327 | Infineon Technologies | 9,560 | - |
| BSR302NL6327HTSA1 | Infineon Technologies | 35,000 | MOSFET N-CH 30V 3.7A SC59 |
| BSR30F | Nexperia | 35,000 | BSR30/SOT89/MPT3 |
| BSR31,115 | Nexperia | 104 | TRANS PNP 60V 1A SOT89 |
| BSR31,135 | NXP Semiconductors | 35,000 | TRANS PNP 60V 1A SOT89 |
| BSR315P L6327 | Infineon Technologies | 6,500 | - |
| BSR315PH6327XTSA1 | Infineon Technologies | 35,000 | MOSFET P-CH 60V 620MA SC59 |
| BSR315PL6327HTSA1 | Infineon Technologies | 35,000 | MOSFET P-CH 60V 620MA SC59 |
| BSR316P L6327 | Infineon Technologies | 6,500 | - |
| BSR316PH6327XTSA1 | Infineon Technologies | 35,000 | MOSFET P-CH 100V 360MA SC59 |
| BSR316PL6327HTSA1 | Infineon Technologies | 35,000 | MOSFET P-CH 100V 360MA SC59 |
| BSR31TA | Diodes Incorporated | 35,000 | TRANS PNP -60V 1A SOT-89 |
