- Manufacturer :
- Nexperia
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 3A (Ta)
- Drain to Source Voltage (Vdss) :
- 30 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 4.5V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 5.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 160 pF @ 15 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-236-3, SC-59, SOT-23-3
- Power Dissipation (Max) :
- 460mW (Ta)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 72mOhm @ 3A, 10V
- Supplier Device Package :
- TO-236AB
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 2.5V @ 250µA
- Datasheets
- PMV90ENER
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| PMV90EN,125 | Nexperia | 12,340 | - |
| PMV90EN,215 | NXP Semiconductors | 35,000 | MOSFET N-CH 30V 1.9A TO236AB |
| PMV90ENE | Nexperia | 3,000 | - |
| PMV90ENE215 | NXP Semiconductors | 35,000 | SMALL SIGNAL N-CHANNEL MOSFET |









