SI6423ADQ-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10.3A (Ta), 12.5A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

168 nC @ 8 V

Input Capacitance (Ciss) (Max) @ Vds :

5875 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Power Dissipation (Max) :

1.5W (Ta), 2.2W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

9.8mOhm @ 10A, 4.5V

Supplier Device Package :

8-TSSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1V @ 250µA