TPCP8011,LF

Manufacturer :

Toshiba Electronic Devices and Storage Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

5A (Ta)

Drain to Source Voltage (Vdss) :

40 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.8 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

505 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

175°C

Package / Case :

8-SMD, Flat Lead

Power Dissipation (Max) :

940mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

51.2mOhm @ 2.5A, 10V

Supplier Device Package :

PS-8

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 1mA